FGB7N60UNDF Datasheet PDF - Fairchild Semiconductor
| Part Number | FGB7N60UNDF | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | Fairchild Semiconductor | |
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September 2013
FGB7N60UNDF
600 V, 7 A
Short Circuit Rated IGBT
Features
• Short Circuit Rated 10 us
• High Current Capability
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Sewing Machine, CNC, Home Appliances, Motor Control
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
GC E
COLLECTOR
(FLANGE)
TO-263AB/D2-PAK
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
C
G
E
Ratings
600
± 20
14
7
21
7
3.5
83
33
-55 to +150
-55 to +150
300
Typ.
Max.
1.5
3.5
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2011 Fairchild Semiconductor Corporation
FGB7N60UNDF Rev. C1
1
www.fairchildsemi.com
|
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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
4
IC = 3.5A
7A
14A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
200V
12 400V
VCC = 100V
9
6
3
Common Emitter
TC = 25oC
0
0 5 10 15 20
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
100
10 td(on)
1
0.1
0
tr Common Emitter
VCC = 400V, VGE = 15V
IC = 7A
TC = 25oC
TC = 125oC
10 20 30 40 50
Gate Resistance, RG [Ω]
60
Figure 8. Capacitance Characteristics
1000
Cies
Coes
100 Cres
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10
1 10
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
30
10 10μs
30
100μs
1
1ms
10 ms
0.1
0.01
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
10
DC
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
300
100
tf
td(off)
10
0
Common Emitter
VCC = 400V, VGE = 15V
IC = 7A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG [Ω]
50
60
©2011 Fairchild Semiconductor Corporation
FGB7N60UNDF Rev. C1
5
www.fairchildsemi.com
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