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FGB5N60UNDF fiches techniques PDF

Fairchild Semiconductor - IGBT

Numéro de référence FGB5N60UNDF
Description IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGB5N60UNDF fiche technique
FGB5N60UNDF
600 V, 5 A
Short Circuit Rated IGBT
Features
• Short Circuit Rated 10 us
• High Current Capability
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Sewing Machine, CNC, Home Appliances, Motor Control
September 2013
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
C
GC E
COLLECTOR
(FLANGE)
TO-263AB/D2-PAK
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
G
E
Ratings
600
± 20
10
5
15
5
2.5
73.5
29.4
-55 to +150
-55 to +150
300
Typ.
Max.
1.7
4.5
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
1
www.fairchildsemi.com

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