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FGL35N120FTD fiches techniques PDF

Fairchild Semiconductor - IGBT

Numéro de référence FGL35N120FTD
Description IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGL35N120FTD fiche technique
FGL35N120FTD
1200 V, 35 A Field Stop Trench IGBT
November 2013
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35 A
• High Input Impedance
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using advanced field stop trench IGBT technology, Fairchild’s
1200V trench IGBTs offer the optimum performance for hard
switching application such as solar inverter, UPS, welder appli-
cations.
GCE
TO-264 3L
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
1
C
G
E
Ratings
1200
25
70
35
105
80
40
368
147
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Max.
0.34
0.9
25
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com

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