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PDF FGA25N120ANTDTU Data sheet ( Hoja de datos )
| Número de pieza | FGA25N120ANTDTU | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C
• Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25°C
• Extremely Enhanced Avalanche Capability
Applications
• Induction Heating, Microwave Oven
April 2014
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device is well suited for the reso-
nant or soft switching application such as induction heating,
microwave oven.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTDTU Rev. C2
1
C
G
E
Ratings
1200
± 20
50
25
90
50
25
150
312
125
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
0.4
2.0
40
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
5000
4500 Ciss
4000
3500
3000
2500
2000
1500
1000
500
Coss
0 Crss
1
Common Emitter
VGE = 0V, f = 1MHz
TC = 25°C
10
Collector-Emitter Voltage, VCE [V]
100
tr
td(on)
10
0
10
Common Emitter
VCC = 600V, VGE = ±15V
IC = 25A
TC = 25°C
TC = 125°C
20 30 40 50 60 70
Gate Resistance, RG [Ω]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
1000
td(off)
100
Common Emitter
VCC = 600V, VGE = ±15V
IC = 25A
TC = 25°C
TC = 125°C
10
0 10 20 30 40 50
Gate Resistance, RG [Ω]
tf
60 70
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 600V, VGE = ±15V
IC = 25A
10 TC = 25°C
TC = 125°C
Eon
Eoff
1
0 10 20 30 40 50 60 70
Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
VGE = ±15V, RG = 10Ω
TC = 25°C
TC = 125°C
100
tr
td(on)
10 20 30 40 50
Collector Current, IC [A]
td(off)
100 tf
Common Emitter
VGE = ±15V, RG = 10Ω
TC = 25°C
TC = 125°C
10 20 30 40
Collector Current, IC [A]
50
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTDTU Rev. C2
5
www.fairchildsemi.com
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