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Fairchild Semiconductor - IGBT

Numéro de référence FGA50T65SHD
Description IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGA50T65SHD fiche technique
FGA50T65SHD
650 V, 50 A Field Stop Trench IGBT
April 2015
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
G
C
E
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM (2)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =150 A, RG = 30  Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2014 Fairchild Semiconductor Corporation
FGA50T65SHD Rev. 1.1
1
C
G
E
FGA50T65SHD
650
20
30
100
50
150
150
60
30
150
319
160
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com

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