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PDF FGA6530WDF Data sheet ( Hoja de datos )
| Número de pieza | FGA6530WDF | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA6530WDF
650 V, 30 A Field Stop Trench IGBT
August 2015
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 30 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for welder and industial applications where low conduction and
switching losses are essential.
Applications
• Welder and Industrial Application
• Power Factor Correction
G
C
E
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 55.9 Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2015 Fairchild Semiconductor Corporation
FGA6530WDF Rev. 1.1
1
C
G
E
FGA6530WDF
650
20
30
60
30
90
90
30
15
60
176
88
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
1000
Cies
100 Coes
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
10
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
100
30
tr
10
5
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
10 20 30 40 50 60 70 80
Gate Resistance, RG []
Figure 11. Switching Loss vs.
Gate Resistance
5000
1000
Eon
100
50
0
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
10 20 30 40 50 60 70 80
Gate Resistance, RG []
Figure 8. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
300V
9
VCC = 200V
400V
6
3
0
0 8 16 24 32 40
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
100
td(off)
10
10
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
10 20 30 40 50 60 70 80
Gate Resistance, RG []
Figure 12. Turn-on Characteristics vs.
Collector Current
300
100
tr
10
1
0
td(on)
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
15 30 45 60
Collector Current, IC [A]
75
90
©2015 Fairchild Semiconductor Corporation
FGA6530WDF Rev. 1.1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA6530WDF.PDF ] | |
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