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PDF FGH25T120SMD Data sheet ( Hoja de datos )
| Número de pieza | FGH25T120SMD | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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August 2014
FGH25T120SMD
1200 V, 25 A Field Stop Trench IGBT
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
• Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 25 A
• 100% of The Parts Tested for ILM(1)
• High Input Impedance
• RoHS Compliant
Applications
• Solar Inverter, Welder, UPS & PFC Applications.
General Description
Using innovative field stop trench IGBT technology, Fairchild’s
new series of field stop trench IGBTs offer the optimum
performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
E
C
G
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Clamped Inductive Load Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 25oC
Diode Continuous Forward Current
@ TC = 100oC
IFM Diode Maximum Forward Current
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1. Vcc = 600 V, VGE = 15 V, IC = 100 A, RG = 23
2. Limited by Tjmax
Inductive Load
©2013 Fairchild Semiconductor Corporation
FGH25T120SMD Rev. C2
1
G
E
Ratings
1200
±25
±30
50
25
100
100
50
25
200
428
214
-55 to +175
-55 to +175
300
Typ.
--
--
--
Max.
0.35
1.4
40
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
Cies
1000
Coes
100
Common Emitter
Cres
VGE = 0V, f = 1MHz
TC = 25oC
20
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
300
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
100 TC = 175oC
tr
td(on)
30
10
0 14 28 42 56
Gate Resistance, RG [Ω ]
Figure 11. Swithcing Loss vs.
Gate Resistance
100
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
10
TC = 25oC
TC = 175oC
Eon
70
1
Eoff
0.1
0
14 28 42 56
Gate Resistance, RG [Ω ]
70
Figure 8. Gate Charge Characteristics
15
Common Emitter
TC = 25oC
12
400V
VCC = 200V
600V
9
6
3
0
0 50 100 150 200 250
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
10000
1000
td(off)
100
10
1
0.1
0
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 175oC
14 28 42 56
Gate Resistance, RG [Ω ]
70
Figure 12. Turn-on Characteristics vs.
Collector Current
300
Common Emitter
VGE = 15V, RG = 23Ω
TC = 25oC
100 TC = 175oC
tr
td(on)
10
0 10 20 30 40 50
Collector Current, IC [A]
©2013 Fairchild Semiconductor Corporation
FGH25T120SMD Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FGH25T120SMD.PDF ] | |
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