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PDF FGH30S130P Data sheet ( Hoja de datos )
| Número de pieza | FGH30S130P | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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November 2014
FGH30S130P
1300 V, 30 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Notes:
1: Limited by Tjmax
C
G
E
Ratings
1300
±25
60
30
90
60
30
500
250
-55 to +175
-55 to +175
300
Typ.
--
--
Max.
0.3
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C5
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-on Characteristics VS.
Collector Current
2500
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC
tr
100
td(on)
Figure 14.Turn-off Characteristics VS.
Collector Current
2500
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC
td(off)
tf
10
20
40
Collector Current, IC [A]
60
100
20
40
Collector Current, IC [A]
60
Figure 15. Switching Loss VS. Gate Resistance
10
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
Figure 16. Switching Loss VS. Collector Current
30k
Common Emitter
VGE = 15V, RG = 10Ω
10k TC = 25oC
TC = 175oC
{Eoff
1
} Eon
0.5
0
10 20 30 40 50 60 70 80
Gate Resistance, RG [Ω]
1k
{Eoff
{Eon
100
0 10 20 30 40 50 60 70
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
100
Figure 18. Forward Characteristics
80
10
Safe Operating Area
VGE = 15V, TC = 175oC
1
1 10
100
1000
Collector-Emitter Voltage, VCE [V]
10
1
0.5
0
TJ = 25oC
TJ = 175oC
TC = 25oC
TC = 175oC
1
Forward Voltage, VF [V]
2
©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C5
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGH30S130P.PDF ] | |
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