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FGH30N60LSD fiches techniques PDF

Fairchild Semiconductor - IGBT

Numéro de référence FGH30N60LSD
Description IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGH30N60LSD fiche technique
FGH30N60LSD
600 V, 30 A PT IGBT
Features
• Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverter, UPS
November 2013
General Description
Using Fairchild's advanced PT technology, the FGA30N60LSD
IGBT offers superior conduction performances, which offer the
optimum performance for medium switching application such as
solar inverter, UPS applications where low conduction losses
are the most important factor.
G
CE
TO-247
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IFSM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
Ratings
600
20
60
30
90
150
480
192
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
C
C
C
Typ.
--
--
--
Max.
0.26
0.92
40
Unit
C/W
C/W
C/W
©2007 Fairchild Semiconductor Corporation
FGH30N60LSD Rev. C1
1
www.fairchildsemi.com

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