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PDF FGP5N60LS Data sheet ( Hoja de datos )
| Número de pieza | FGP5N60LS | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGP5N60LS
600 V, 5 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.7 V @ IC = 5 A
• High Input Impedance
• RoHS Compliant
Applications
• HID Ballast
November 2013
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop IGBTs offer the optimum performance for HID ballast
where low conduction losses are essential.
C
GCE
TO-220
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test , Pulse width = 100 usec , Duty = 0.2, VGE = 13.5 V
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
600
20
10
5
36
83
33
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
1.5
62.5
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
300
tf
100
td(off)
10
0
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
Figure 15. Turn-off Characteristics vs.
Collector Current
800
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
tf
100
td(off)
Figure 14. Turn-on Characteristics vs.
Collector Current
10
td(on)
tr
1
0.1
2
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
468
Collector Current, IC [A]
10
Figure 16. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
TC = 25oC
TC = 125oC
Eoff
100
Eon
20
2 4 6 8 10
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
1000
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
Eoff
100
Eon
30
0 10 20 30 40
Gate Resistance, RG []
Figure 18. Turn off Switching SOA
Characteristics
50
50
10
1
10
2 4 6 8 10
Collector Current, IC [A]
Safe Operating Area
VGE = 13.5V, TC = 125oC
0.1
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGP5N60LS.PDF ] | |
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