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PDF FCH170N60 Data sheet ( Hoja de datos )
| Número de pieza | FCH170N60 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FCH170N60
N-Channel SuperFET® II MOSFET
600 V, 22 A, 170 m
July 2014
Features
• 650 V @TJ = 150°C
• Typ. RDS(on) = 150 m
• Ultra Low Gate Charge (Typ. Qg = 42 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET II MOSFET
is suitable for various AC/DC power conversion for system
miniaturization and higher efficiency.
D
G
D
S
TO-247
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCH170N60 Rev. C2
1
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCH170N60
600
±20
±30
22
14
66
525
5
2.27
100
20
227
1.82
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCH170N60
0.55
40
Unit
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single pulse
0.001
10-5
10-4
PDM
t1
t2
*Notes:
1. ZJC(t) = 0.55oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
t1, Rectangular Pulse Duration [sec]
10-1
100
©2014 Fairchild Semiconductor Corporation
FCH170N60 Rev. C2
5
www.fairchildsemi.com
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