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FCH47N60NF fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FCH47N60NF
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FCH47N60NF fiche technique
FCH47N60NF
N-Channel SupreMOS® FRFET® MOSFET
600 V, 45.8 A, 65 mΩ
November 2013
Features
• 650 V @ TJ = 150oC
• Typ. RDS(on) = 57.5 mΩ
• Ultra Low Gate Charge (Typ. Qg = 240 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. Supre-
MOS FRFET® MOSFET’s optimized body diode reverse recov-
ery performance can remove additional component and
improve system reliability.
D
G
D
S
TO-247
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCH47N60NF
600
±30
45.8
28.9
137.4
2926
15.3
3.7
100
50
368
2.94
-55 to +150
300
FCH47N60NF
0.34
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FCH47N60NF Rev. C2
1
www.fairchildsemi.com

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