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PDF FDH055N15A Data sheet ( Hoja de datos )
| Número de pieza | FDH055N15A | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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March 2015
FDH055N15A
N-Channel PowerTrench® MOSFET
150 V, 167 A, 5.9 mΩ
Features
• RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Sever / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
G
D
S
TO-247
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
Drain Current
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDH055N15A
150
±20
±30
167*
118
156
668
835
6.0
429
2.86
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 156 A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDH055N15A
0.35
40
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDH055N15A Rev. C3
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05
0.01
0.02
0.01
Single pulse
PDM
*Notes:
t1
t2
1. ZθJC(t) = 0.35oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
10-5
10-4
10-3
10-2
t1R, Recetcatanngguullaarr PPulsee DDuurraatitoionn[s[esce]c]
10-1
1
©2011 Fairchild Semiconductor Corporation
FDH055N15A Rev. C3
5
www.fairchildsemi.com
5 Page | ||
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