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Numéro de référence | FQAF11N90C | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
FQAF11N90C
N-Channel QFET® MOSFET
900 V, 7.0 A, 1.1 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 7.0 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V,
ID = 3.5 A
• Low Gate Charge (Typ. 60 nC)
• Low Crss (Typ. 23 pF)
• 100% Avalanche Tested
D
G
D
S
TO-3PF
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
FQAF11N90C
900
7.0
4.4
28.0
± 30
960
7.0
12
4.0
120
0.96
-55 to +150
300
Thermal Characteristics
+θ
+θ
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQAF11N90C
1.04
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
6?
6?
©2003 Fairchild Semiconductor Corporation
FQAF11N90C Rev. C1
1
www.fairchildsemi.com
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Pages | Pages 9 | ||
Télécharger | [ FQAF11N90C ] |
No | Description détaillée | Fabricant |
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