DataSheetWiki


TC511000Z-10 fiches techniques PDF

Toshiba - DRAM

Numéro de référence TC511000Z-10
Description DRAM
Fabricant Toshiba 
Logo Toshiba 





1 Page

No Preview Available !





TC511000Z-10 fiche technique
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM
SILICON GATE CMOS
DESCRIPTION
TC511000P/J/Z-85, TC511000P/J/Z-l0
TC511000P/J/Z-12
The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized 1,048,576 words by 1 bit.
The TC5llOOOP/J/Z utilizes TOSHIBA's CHOS Silicon gate process technology as well as ad-
vanced circuit techniques to provide wide operating margins, both internally and to the
system user. Multiplexed address inputs permit the TC5llOOOP/J/Z to be packaged in a
standard 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP. The package
size provides high system bit densities and is compatible with widely available automated
testing and insertion equipment. System oriented features include single power supply of
5V±10% tolerance" direct interfacing capability with high performance logic families such
as Schottky TTL. IJTest Mode" function is implemented from Ilevision C.
FEATURES
• 1,048,576 words by 1 bit organization
• Fast access time and cycle time
TC5llOOOP/J/Z-85-10-l2
tRAC HAS Access Time
tM
Column Address
Access Time
85ns
45ns
lOOns l20ns
Sans 60ns
tCAC CAS Access Time
t RC Cycle Time
tpc
Fast Page Hade
Cycle Time
25ns
l65ns
SOns
25ns 30ns
190ns 220ns
55ns 70ns
• Single pOvler supply of 5V±10% ~vith a built-
in VEE generator
PIN COmlE:TICN (TOP VIEt-l)
• Low Power
3n5m~J HAX. Operating (TC5ll000P / J /Z-85)
330mtoJ UP.X. Operating(TC5ll000P/J/Z-10)
275mW MAX. Operating(TC5ll000P/J/Z-12)
5.5mtJ HA.,{. Standby
• Output unlatched at cycle end allows
tHo-dimensional chip selection
• Common I/O capability using "EARLY WRITE"
operation
• Read-Modify-Hrite, CAS before HAS refrl::'~~'J I
RAS-only refresh, Hidden refresh, Fast
Page Mode and Test Mode capability
• All inputs and output TTL compatible
• 512 refresh cycles/8ms
• Package Plastic DIP: TC5ll000P
Plastic SOJ: TC5ll000J
Plastic ZIP: TC5ll000Z
Plastic DIP
Plastic SOJ Plastic ZIP
DIU
~
ID:S
11"
AO
1
A2
A3
Vss
DOU1
~
A9
A8
A7
All
A5
a4.
~
roili
TF
N.C.
AO
Al
A2
A3
VCC
PHI rlN·1ES
AD '" A9
m
DIN
DOUT
CAS
WRITE
Vec
VSS
TF
N.C.
Address Inputs
Row Address Strobe
Data In
Data Out
Column Address Strobe
Read/Write Input
Power (+5V)
Ground
Test Function
No Connection
Vss
~1
N.C.
A9
A8
A7
A6
A5
A4.
BLOCK DIAGRAf.1
Al
A3 AO
M, Al
AS A2
A8 A3
A4.
AS
AS
A7
AS
A9
GUDGTRATE DIAG -Q Vee
L-0_E_N_E_RA_T_O_R_ - - - ' --0 V S8
- A-85 -

PagesPages 20
Télécharger [ TC511000Z-10 ]


Fiche technique recommandé

No Description détaillée Fabricant
TC511000Z-10 DRAM Toshiba
Toshiba
TC511000Z-12 DRAM Toshiba
Toshiba

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche