IRGP4263D-EPbF Datasheet PDF - International Rectifier
| Part Number | IRGP4263D-EPbF | |
| Description | Insulated Gate Bipolar Transistor | |
| Manufacturers | International Rectifier | |
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There is a preview and IRGP4263D-EPbF download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
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VCES = 650V
IC = 60A, TC =100°C
IRGP4263DPbF
IRGP4263D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
E
n-channel
G
Gate
GCE
IRGP4263DPbF
TO‐247AC
C
Collector
E
GC
IRGP4263D‐EPbF
TO‐247AD
E
Emitter
Features
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
5.5µs short circuit SOA
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4263DPbF
IRGP4263D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4263DPbF
IRGP4263D-EPbF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
90
60
192
192
74
45
±20
325
160
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.46
0.97
–––
–––
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 21, 2014
|
| |
 
12
10
ICE = 24A
8 ICE = 48A
ICE = 96A
6
4
2
0
5 10 15 20
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
10
9
8
7 EON
6
5
4
3
2 EOFF
1
0
0 10 20 30 40 50 60 70 80 90 100 110
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
8
7
6
EON
5
4
3
EOFF
2
1
0
0 20 40 60 80 100 120
RG ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
IRGP4263DPbF/IRGP4263D-EPbF
200
TJ = 25°C
150 TJ = 175°C
100
50
0
4 6 8 10 12 14
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
100 tF
tdON
tR
10
0
10 20 30 40 50 60 70 80 90 100
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
10000
1000
100
10
tdOFF
tF
tdON
tR
1
0 20 40 60 80 100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
Submit Datasheet Feedback
August 21, 2014
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRGP4263D-EPbF electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRGP4263D-EPbF.PDF Datasheet ] | |
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