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PDF FCPF2250N80Z Data sheet ( Hoja de datos )
| Número de pieza | FCPF2250N80Z | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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August 2015
FCPF2250N80Z
N-Channel SuperFET® II MOSFET
800 V, 3.5 A, 2.25 Ω
Features
• RDS(on) = 1.8 Ω (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 11 nC)
• Low Eoss (Typ. 1.1 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switching
power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
GDS TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature, with heatsink.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCPF2250N80Z Rev. 1.1
1
S
FCPF2250N80Z
800
±20
±30
3.5*
2.2*
6.5*
21.6
0.52
0.22
100
20
21.9
0.18
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF2250N80Z
5.7
62.5
Unit
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
10
0.5
1 0.2
0.1
0.05
0.02
0.1 0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 5.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
t1, Rectangular Pulse Duration [sec]
100
101
©2014 Fairchild Semiconductor Corporation
FCPF2250N80Z Rev. 1.1
5
www.fairchildsemi.com
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| PDF Descargar | [ Datasheet FCPF2250N80Z.PDF ] | |
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