|
|
PDF FCPF1300N80Z Data sheet ( Hoja de datos )
| Número de pieza | FCPF1300N80Z | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FCPF1300N80Z (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
August 2015
FCPF1300N80Z
N-Channel SuperFET® II MOSFET
800 V, 6 A, 1.3 Ω
Features
• RDS(on) = 1.05 Ω (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 16.2 nC)
• Low Eoss (Typ. 1.57 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress. Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
GDS
TO-220F
D
G
S
TO-220F
Y-formed
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature, with heatsink.
Thermal Characteristics
FCPF1300N80Z
FCPF1300N80ZYD
800
±20
±30
6.0*
3.8*
12*
48
0.8
0.26
100
20
24
0.19
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCPF1300N80Z Rev. 1.2
1
FCPF1300N80Z
FCPF1300N80ZYD
5.2
62.5
Unit
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
6
0.5
1 0.2
0.1
0.05
0.02
0.1 0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 5.2oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
100
101
©2014 Fairchild Semiconductor Corporation
FCPF1300N80Z Rev. 1.2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FCPF1300N80Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FCPF1300N80Z | MOSFET ( Transistor ) | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |