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FCPF650N80Z fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FCPF650N80Z
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FCPF650N80Z fiche technique
August 2015
FCPF650N80Z
N-Channel SuperFET® II MOSFET
800 V, 10 A, 650 mΩ
Features
• RDS(on) = 530 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 27 nC)
• Low Eoss (Typ. 2.8 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress. Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature, with heatsink.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCPF650N80Z Rev. 1.2
1
FCPF650N80Z
800
±20
±30
10*
6.3*
24*
204
1.6
0.305
100
20
30.5
0.24
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF650N80Z
4.1
62.5
Unit
oC/W
www.fairchildsemi.com

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