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PDF FCB20N60_F085 Data sheet ( Hoja de datos )
| Número de pieza | FCB20N60_F085 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FCB20N60_F085
N-Channel MOSFET
600V, 20A, 198mΩ
Features
Typ rDS(on) = 173mΩ at VGS = 10V, ID = 20A
Typ Qg(tot) = 72nC at VGS = 10V, ID = 20A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Description
SuperFETTM is Fairchild’s proprietary new generation of high
voltage MOSFETs utilizing an advanced charge balance
mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is suitable for various automotive
DC/DC power conversion.
Applications
Automotive On Board Charger
Automotive DC/DC converter for HEV
November
2013
D
D
GS
G
S
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
600
±30
20
See Figure4
480
341
2.3
-55 to + 150
0.44
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FCB20N60
Device
FCB20N60_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1: Current is limited by bondwire configuration.
3m2p:r:oeRuSsnetθatnJirntAteigndisgshutTherJferae=csieu2sm5ob°faCotshf,eetLhdde=orjan1ui5nnmmcpotiHiuonn,nstI-.iAtnoSRg-c=θoaJn8sCAeai,sa1VngDidunDa2cra=pasan1edt0e-to0eofVd-a2bdomyuzbrdicineeognsptiipgntenhdreuw.rcmhtoialerl
charging and VDD = 0V during time in avalanche
resistance where the case thermal reference is defined as the solder
RθJAis determined by the user's board design. The maximum rating
©2013 Fairchild Semiconductor Corporation
FCB20N60_F085 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics
3.2
PULSE DURATION = 80μs
2.8 DUTY CYCLE = 0.5% MAX
2.4
2.0
1.6
1.2
0.8
0.4
-80
ID = 20A
VGS = 10V
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE(oC)
160
Figure 11. Normalized Rdson vs Junction
Temperature
1.2
VGS = VDS
1.1 ID = 250μA
1.0
0.9
0.8
0.7
0.6
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE(oC)
160
Figure 12. Normalized Gate Threshold Voltage vs
Temperature
1.2
ID = 1mA
1.1
1.0
0.9
0.8
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 13. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
1000
Ciss
100 Coss
10
f = 1MHz
VGS = 0V
Crss
1
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 14. Capacitance vs Drain to Source
Voltage
10
ID = 20A
8
6
VDD = 240V
VDD = 300V
VDD = 360V
4
2
0
0 20 40 60 80
Qg, GATE CHARGE(nC)
Figure 15. Gate Charge vs Gate to Source Voltage
FCB20N60_F085 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FCB20N60_F085.PDF ] | |
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