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Número de pieza | IRFS634 | |
Descripción | 250V/5.5A N-Channel Power MOSFET | |
Fabricantes | TAITRON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFS634 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! 250V/5.5A N-Channel Power MOSFET (Discontinued)
IRFS634
SAMSUNG
General Description
Low on resistance
Improved inductive ruggedness
Fast switching time
Rugged polysilicon gate cell structure
Lower input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220F
Features
VDSS=250V, ID=5.5A
RDS(ON) ≤ 0.45 Ω @ VGS=10V
Pin Configuration
1: Gate 2: Drain 3: Source
TO-220F
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Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/PQ
Page 1 of 10
1 page Fig.3- Typical Saturation Characteristics
IRFS634
SAMSUNG
Fig.4- Maximum Safe Operation Area
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Fig.5- Maximum Effective Transient Thermal Impedance Junction-Case VS. Pulse Duration
www.taitroncomponents.com
Square Wave pulse Duration t1(S)
Rev. A/PQ
Page 5 of 10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFS634.PDF ] |
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