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Numéro de référence | FDB070AN06A0 | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
October 2013
FDB070AN06A0
N-Channel PowerTrench® MOSFET
60 V, 80 A, 7 mΩ
Features
Applications
• RDS(on) = 6.1 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
• Synchronous Rectification for ATX / Server / Telecom PSU
• Qg(tot) = 51 nC ( Typ.) @ VGS = 10 V
• Battery Protection Circuit
• Low Miller Charge
• Motor Drives and Uninterruptible Power Supplies
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82567
D
D
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 97oC, VGS = 10V)
Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case, Max.
Thermal Resistance Junction to Ambient, Max. (Note 2)
Thermal Resistance Junction to Ambient, Max., 1in2 copper pad area
FDB070AN06A0
60
±20
80
15
Figure 4
190
175
1.17
-55 to 175
0.86
62
43
Unit
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2003 Fairchild Semiconductor Corporation
FDB070AN06A0 Rev. C2
1
www.fairchildsemi.com
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Pages | Pages 13 | ||
Télécharger | [ FDB070AN06A0 ] |
No | Description détaillée | Fabricant |
FDB070AN06A0 | MOSFET ( Transistor ) | Fairchild Semiconductor |
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