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Número de pieza | 3DG8 | |
Descripción | NPN Silicon High Frequency Low Power Transistor | |
Fabricantes | Shaanxi Qunli Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 3DG8 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! 3DG8
NPN Silicon High Frequency Low Power Transistor
Features:
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging.
2. Small volume, light weight, easy installation.
3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit.
4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Symbols Unit
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
V
V
V
Collector- Emitter
VCE(sat)
Saturation Voltage Drop
V
Base- Emitter Saturation
VBE(sat)
Voltage Drop
V
C-B Leakage Current
ICBO uA
C-E Leakage Current
E-B Leakage Current
ICEO uA
IEBO uA
DC Current Gain
hFE
A
15
15
Specifications
BC
200
30
175
-55~+175
40 40
25 25
4
0.5
1.0
0.1
0.1
0.1
25~270
Transition frequency
fT MHz 150
150
300
hFE Colored:
Color
hFE
Orange
25~40
Yellow
40~55
Green
55~80
Blue
80~120
(Ta = 25°C )
Test Condition
D
Ta=25°C
60 IC=0.1mA
45
IE=0.1mA
IC=10mA
IB=1mA
VCB=10V
VCE=10V
VEB=1.5V
VCE=10V, IC=3mA
VCE=10V, IC=3mA
300
f=100MHz
Purple
120~180
Gray
180~270
Outline and Dimensions:
Contact: Jandy Lei
Tel.: 13991730782
QQ: 1142478250
235
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 3DG8.PDF ] |
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