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FDD7N20 fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDD7N20
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD7N20 fiche technique
FDD7N20 / FDU7N20
N-Channel MOSFET
200V, 5A, 0.69Ω
Features
• RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A
• Low gate charge( Typ. 5nC )
• Low Crss ( Typ. 5pF )
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
April 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especically tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
GD
S
D-PAK
FDD Series
G DS
I-PAK
FDU Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
D
S
Ratings
200
±30
5
3
15
62.5
5
4.3
4.5
43
0.34
-55 to +150
300
Ratings
2.9
110
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDD7N20 / FDU7N20 Rev. A
1
www.fairchildsemi.com

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