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Numéro de référence | FDMS8558S | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
FDMS8558S(PCN)
October 2014
N-Channel PowerTrench® SyncFETTM
25 V, 90 A, 1.5 mΩ
Features
Dual CoolTM PQFN package
Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A
Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 31 A
High performance technology for extremely low rDS(on)
SyncFETTM Schottky Body Diode
RoHS Compliant
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Top Bottom
Pin 1
S D5
4G
S
S
G
D6
3S
Power 56
D
D
D
D
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
12
90
33
140
145
78
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
TC = 25 °C
TA = 25 °C
(Note 1a)
1.6
50
°C/W
Device Marking
09OD
Device
FDMS8558S
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.PCN2
1
www.fairchildsemi.com
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Pages | Pages 8 | ||
Télécharger | [ FDMS8558S ] |
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