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FDMS8558S fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDMS8558S
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMS8558S fiche technique
FDMS8558S(PCN)
October 2014
N-Channel PowerTrench® SyncFETTM
25 V, 90 A, 1.5 mΩ
Features
„ Dual CoolTM PQFN package
„ Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A
„ Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 31 A
„ High performance technology for extremely low rDS(on)
„ SyncFETTM Schottky Body Diode
„ RoHS Compliant
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
Top Bottom
Pin 1
S D5
4G
S
S
G
D6
3S
Power 56
D
D
D
D
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
12
90
33
140
145
78
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
TC = 25 °C
TA = 25 °C
(Note 1a)
1.6
50
°C/W
Device Marking
09OD
Device
FDMS8558S
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.PCN2
1
www.fairchildsemi.com

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