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FDMS7556S fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDMS7556S
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMS7556S fiche technique
October 2014
FDMS7556S
N-Channel PowerTrench® SyncFETTM
25 V, 130 A, 1.2 mΩ
Features
General Description
„ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 35 A
„ Max rDS(on) = 1.65 mΩ at VGS = 4.5 V, ID = 31 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMS7556S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for Synchronous Buck Converters
„ Notebook
„ Server
„ Telecom
„ High Efficiency DC-DC Switch Mode Power Supplies
Top Bottom
Pin 1
S D5
4G
S
S
G
D6
3S
Power 56
D
D
D
D
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
130
222
35
200
312
96
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.3
50
°C/W
Device Marking
FDMS7556S
Device
FDMS7556S
©2013 Fairchild Semiconductor Corporation
FDMS7556S Rev.C4
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com

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