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دیتاشیت - National Semiconductor - JFET Input Operational Amplifiers

شماره قطعه LF356
شرح مفصل JFET Input Operational Amplifiers
تولید کننده National Semiconductor 
آرم National Semiconductor 


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LF356 شرح
www.DataSheet4U.com
December 2001
LF155/LF156/LF256/LF257/LF355/LF356/LF357
JFET Input Operational Amplifiers
General Description
These are the first monolithic JFET input operational ampli-
fiers to incorporate well matched, high voltage JFETs on the
same chip with standard bipolar transistors (BI-FETTech-
nology). These amplifiers feature low input bias and offset
currents/low offset voltage and offset voltage drift, coupled
with offset adjust which does not degrade drift or
common-mode rejection. The devices are also designed for
high slew rate, wide bandwidth, extremely fast settling time,
low voltage and current noise and a low 1/f noise corner.
Features
Advantages
n Replace expensive hybrid and module FET op amps
n Rugged JFETs allow blow-out free handling compared
with MOSFET input devices
n Excellent for low noise applications using either high or
low source impedance — very low 1/f corner
n Offset adjust does not degrade drift or common-mode
rejection as in most monolithic amplifiers
n New output stage allows use of large capacitive loads
(5,000 pF) without stability problems
n Internal compensation and large differential input voltage
capability
Applications
n Precision high speed integrators
n Fast D/A and A/D converters
n High impedance buffers
n Wideband, low noise, low drift amplifiers
n Logarithmic amplifiers
n Photocell amplifiers
n Sample and Hold circuits
Common Features
n Low input bias current: 30pA
n Low Input Offset Current: 3pA
n High input impedance: 1012
n Low input noise current:
n High common-mode rejection ratio:
n Large dc voltage gain: 106 dB
100 dB
Uncommon Features
j Extremely
fast settling
time to
0.01%
j Fast slew
rate
j Wide gain
bandwidth
j Low input
noise
voltage
LF155/
LF355
4
5
2.5
20
LF156/
LF256/
LF356
1.5
12
5
12
LF257/
LF357
(AV=5)
1.5
50
20
12
Units
µs
V/µs
MHz
Simplified Schematic
ww*3wpF.iDn LaF3t5a7 Sserhiese. et4U.com
BI-FET, BI-FET IIare trademarks of National Semiconductor Corporation.
© 2001 National Semiconductor Corporation DS005646
00564601
www.national.com

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