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FDPF045N10A fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDPF045N10A
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDPF045N10A fiche technique
August 2014
FDPF045N10A
N-Channel PowerTrench® MOSFET
100 V, 67 A, 4.5 mΩ
Features
• RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 67 A
• Fast Switching Speed
• Low Gate Charge, QG = 57 nC(Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor®’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
G
DS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,1/8” from Case for 5 Seconds
FDPF045N10A
100
±20
67
47
268
637
6.0
43
0.29
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF045N10A
3.5
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDPF045N10A Rev. C3
1
www.fairchildsemi.com

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