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PDF FDB3502 Data sheet ( Hoja de datos )
| Número de pieza | FDB3502 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2008
FDB3502
N-Channel Power Trench® MOSFET
75V, 14A, 47mΩ
tm
Features
General Description
Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
Synchronous rectifier
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
75
±20
14
22
6
40
54
41
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
40
°C/W
Device Marking
FDB3502
Device
FDB3502
Package
TO-263AB
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC = 3oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJc x RθJc + TC
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
10-1
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-4
SINGLE PULSE
RθJA = 62.5oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Transient Thermal Response Curve
1
1000
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDB3502.PDF ] | |
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