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PDF FDD3860 Data sheet ( Hoja de datos )

Número de pieza FDD3860
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDD3860 Hoja de datos, Descripción, Manual

FDD3860
N-Channel PowerTrench® MOSFET
100 V, 29 A, 36 mΩ
Features
„ Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
„ High Performance Trench Technology for Extremely Low
rDS(on)
„ 100% UIL Tested
„ RoHS Compliant
September 2016
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low rDS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
Applications
„ DC-AC Conversion
„ Synchronous Rectifier
G
S
D
DT O-P-2A5K2
(T O -25 2)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
29
6.2
60
121
83
3.75
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
40
°C/W
Device Marking
FDD3860
Device
FDD3860
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
16 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
1
www.fairchildsemi.com

1 page




FDD3860 pdf
Typical Characteristics TJ = 25°C unless otherwise noted.
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC = 1.8oC/W
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURREPNDTMAS FOLLOWS:
I = I25
1----5---0-1---2--t--51-T----C----
NOTES:
t2
TC
=
25oC
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.001
10-6
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
10-1
1
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
10-4
10-3
PDM
SINGLE PULSE
RθJA = 40oC/W
(Note 1a)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 14. Transient Thermal Response Curve
1000
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
10-4
10-3
PDM
SINGLE PULSE
RθJA = 96oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
Figure 15. Transient Thermal Response Curve
100
1000
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
5
www.fairchildsemi.com

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