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Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDD5353
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD5353 fiche technique
April 2015
FDD5353
N-Channel Power Trench® MOSFET
60V, 50A, 12.3m
Features
General Description
Max rDS(on) = 12.3mat VGS = 10V, ID = 10.7A
Max rDS(on) = 15.4mat VGS = 4.5V, ID = 9.5A
100% UIL Tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
RoHS Compliant
Application
Inverter
Synchronous rectifier
Primary switch
G
S
D
DT O-P-2A5K2
(T O -25 2)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
60
±20
50
11.5
100
253
69
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RJC
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
40
°C/W
Device Marking
FDD5353
Device
FDD5353
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
16mm
Quantity
2500 units
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
1
www.fairchildsemi.com

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