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PDF 2N7002VA Data sheet ( Hoja de datos )
| Número de pieza | 2N7002VA | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2015
2N7002V / 2N7002VA
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free by Design/RoHS Compliant
(Pin4)
D2 G1 S1
D2 S1 G1
SOT 563F
* Pin1 and Pin4 are exchangeable.
S2 G2 D1
2N7002V
G2 S2 D1
2N7002VA
Ordering Information
Part Number
2N7002V
2N7002VA
Top Mark
AB
AC
Package
SOT-563F 6L
SOT-563F 6L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VDSS
VDGR
VGSS
ID
TJ, TSTG
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS ≤ 1.0 MΩ)
Gate-Source Voltage
Drain Current
Junction and Storage Temperature Range
Continuous
Pulsed
Continuous
Pulsed
Value
60
60
±20
±40
280
1.5
-55 to +150
Unit
V
V
V
mA
A
°C
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
www.fairchildsemi.com
1 page  
Physical Dimensions
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Figure 9. 6-LEAD, MO293, 1.2MM WIDE, SOT563F
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N7002VA.PDF ] | |
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