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PDF FDC637BNZ Data sheet ( Hoja de datos )
| Número de pieza | FDC637BNZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDC637BNZ
N-Channel 2.5V Specified PowerTrench® MOSFET
20V, 6.2A, 24mΩ
Features
General Description
September 2007
tm
Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A
Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A
Fast switching speed
Low gate charge (8nC typical)
High performance trench technology for extremely low rDS(on)
SuperSOT™–6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick)
HBM ESD protection level > 2kV typical (Note 3)
Manufactured using green packaging material
Halide-Free
RoHS Compliant
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint compared with bigger SO-8
and TSSOP-8 packages.
Applications
DC - DC Conversion
Load switch
Battery Protection
S
D
D
D1
6D
Pin 1
G
D
D
D2
G3
5D
4S
SuperSOTTM -6
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
6.2
20
1.6
0.8
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
78
156
°C/W
Device Marking
.637Z
Device
FDC637BNZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
RθJA = 156oC/W
1E-3
10-4
10-3
10-2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 100
t, RECTANGULAR PULSE DURATION (s)
101
102
Figure 12. Transient Thermal Response Curve
103
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
5
www.fairchildsemi.com
5 Page | ||
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