PDF FDS8958B Data sheet ( Hoja de datos )

Número de pieza	FDS8958B
Descripción	MOSFET ( Transistor )
Fabricantes	Fairchild Semiconductor
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No Preview Available ! FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ November 2013 Features Q1: N-Channel Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A HBM ESD protection level > 3.5 kV (Note 3) General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance. These devices are well suite d for low voltage and battery powered applications where low in-line power loss and fast switching are required. Application RoHS Compliant DC-DC Conversion BLU and motor drive inverter D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 D2 5 D2 6 D1 7 D1 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TA = 25 °C TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) (Note 4) Thermal Characteristics Q1 Q2 30 -30 ±20 ±25 6.4 -4.5 30 -30 2.0 1.6 0.9 18 5 -55 to +150 Units V V A W mJ °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 40 78 °C/W Device Marking FDS8958B Device FDS8958B Package SO-8 Reel Size 13 ” Tape Width 12 mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.C 1 www.fairchildsemi.com 1 page Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 10 ID = 6.4 A 8 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V 2 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 1000 Ciss 100 Coss Crss f = 1 MHz VGS = 0 V 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure8. CapacitancevsDrain to Source Voltage 30 9 8 7 6 5 4 TJ = 25 oC 3 2 TJ = 125 oC 1 0.001 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) Figure9. UnclampedInductive Switching Capability 500 100 100 THIS AREA IS LIMITED BY rDS(on) 10 0.1 ms 1 0.1 0.01 0.01 SINGLE PULSE TJ = MAX RATED RθJA = 135 oC/W TA = 25 oC 1 ms 10 ms 100 ms 1s 10 s DC 0.1 1 10 VDS, DRAIN to SOURCE VOLTAGE (V) 100 Figure 10. Forward Bias Safe Operating Area 100 VGS = 10 V 10 SINGLE PULSE RθJA = 135 oC/W TA = 25 oC 1 0.5 10-4 10-3 10-2 10-1 1 10 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation 100 1000 ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.C 5 www.fairchildsemi.com 5 Page © 2008 Fairchild Semiconductor Corporation FDS8958B • Rev. C 11 www.fairchildsemi.com 11 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
FDS8958	Dual N & P-Channel PowerTrench MOSFET	Fairchild Semiconductor
FDS8958A	Dual N & P-Channel Enhancement Mode Field Effect Transistor	Fairchild Semiconductor
FDS8958A_F085	Dual N & P-Channel PowerTrench MOSFET	Fairchild Semiconductor
FDS8958B	MOSFET ( Transistor )	Fairchild Semiconductor

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