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Numéro de référence | FDS6911 | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
December 2011
FDS6911
Dual N-Channel Logic Level PowerTrench® MOSFET
20V, 7.5A, 13mΩ
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
rDS(on) = 13 mΩ @ VGS = 10 V
rDS(on) = 17 mΩ @ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
S1 1
G1 2
S2 3
G2 4
Q1 8 D1
7 D1
Q2 6 D2
5 D2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6911
FDS6911
13’’
Ratings
20
± 20
7.5
20
1.6
1.0
0.9
–55 to +150
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDS6911 Rev C1
www.fairchildsemi.com
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Pages | Pages 7 | ||
Télécharger | [ FDS6911 ] |
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