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PDF FDZ1323NZ Data sheet ( Hoja de datos )
| Número de pieza | FDZ1323NZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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September 2014
FDZ1323NZ
Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
20 V, 10 A, 13 mΩ
Features
Max rS1S2(on) = 13 mΩ at VGS = 4.5 V, IS1S2 = 1 A
Max rS1S2(on) = 13 mΩ at VGS = 3.8 V, IS1S2 = 1 A
Max rS1S2(on) = 16 mΩ at VGS = 3.1 V, IS1S2 = 1 A
Max rS1S2(on) = 18 mΩ at VGS = 2.5 V, IS1S2 = 1 A
Occupies only 3 mm2 of PCB area
Ultra-thin package: less than 0.35 mm height when mounted
to PCB
High power and current handling capability
HBM ESD protection level > 3.6 kV (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench® process with state of the art
“low pitch” WLCSP packaging process, the FDZ1323NZ
minimizes both PCB space and rS1S2(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge and low rS1S2(on).
Applications
Battery management
Load switch
Battery protection
PIN1
PIN1
S1
S1
G1
S2
G2
S2
S1
G1
TOP
WL-CSP 1.3X2.3
BOTTOM
G2
S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
VGS
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Voltage
Gate to Source Voltage
Source1 to Source2 Current -Continuous TA = 25°C
-Pulsed
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
10
40
2
0.5
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
62
257
°C/W
Device Marking
EC
Device
FDZ1323NZ
Package
WL-CSP 1.3X2.3
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
100
10
SINGLE PULSE
RθJA = 257 oC/W
1 TA = 25 oC
0.4
10-3
2
1
0.1
0.01
0.001
10-4
10-2
10-1
100
101
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
100
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 257 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDZ1323NZ.PDF ] | |
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