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PDF FDMA910PZ Data sheet ( Hoja de datos )
| Número de pieza | FDMA910PZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMA910PZ
Single P-Channel PowerTrench® MOSFET
-20 V, -9.4 A, 20 mΩ
June 2014
Features
General Description
Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A
Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A
Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A
Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications.It features a MOSFET with low on-state resistance
and zener diode protection against ESD. The MicroFET 2X2
package offers exceptional thermal performance for its physical
size and is well suited to linear mode applications.
HBM ESD protection level > 2.8k V typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
Pin 1
Drain
DD G
Source
Bottom Drain Contact
D1
6D
D2
5D
G3
DD S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Parameter
TA = 25°C
PD
TJ, TSTG
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
4S
Ratings
-20
±8
-9.4
-45
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
910
Device
FDMA910PZ
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMA910PZ Rev.C5
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 145 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMA910PZ Rev.C5
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMA910PZ.PDF ] | |
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