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PDF FDMB2308PZ Data sheet ( Hoja de datos )
| Número de pieza | FDMB2308PZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMB2308PZ
April 2014
Dual Common Drain P-Channel PowerTrench® MOSFET
-20 V, -7 A, 36 mΩ
Features
Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A
Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A
Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x3 mm
HBM ESD protection level 2.8 kV (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain P-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench® process with state of the art
MircoFET Leadframe, the FDMB2308PZ minimizes both PCB
space and rS1S2(on).
Application
Li-Ion Battery Pack
Pin 1
Pin 1
S1 S1 G1
D1/D2
G2 4
S2 5
3 G1
2 S1
MLP 2x3
S2 S2 G2
S2 6
1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VS1S2
VGS
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Voltage
Gate to Source Voltage
Source1 to Source2 Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±12
-7
-30
2.2
0.8
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
57
161
°C/W
Device Marking
308
Device
FDMB2308PZ
Package
MLP 2x3
Reel Size
7’’
Tape Width
8 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMB2308PZ Rev.C3
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
100
10
SINGLE PULSE
RθJA = 161 oC/W
TA = 25 oC
1
0.1
10-3
10-2
10-1
1
10
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
100
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
SINGLE PULSE
RθJA = 161 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2013 Fairchild Semiconductor Corporation
FDMB2308PZ Rev.C3
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMB2308PZ.PDF ] | |
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