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PDF FDME905PT Data sheet ( Hoja de datos )
| Número de pieza | FDME905PT | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDME905PT
P-Channel PowerTrench® MOSFET
-12 V, -8 A, 22 mΩ
Features
Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A
Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A
Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
RoHS Compliant
October 2013
General Description
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
Pin 1
G
D
D
Bottom Drain Contact
S D1
6D
D2
S
D G3
D
5D
4S
TOP
BOTTOM
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-12
±8
-8
-30
2.1
0.7
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
4.5
60
175
°C/W
Device Marking
E95
Device
FDME905PT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C4
1
www.fairchildsemi.com
1 page  
Dimensional Outline and Pad Layout
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C4
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDME905PT.PDF ] | |
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