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PDF FDMA86251 Data sheet ( Hoja de datos )
| Número de pieza | FDMA86251 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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October 2015
FDMA86251
Single N-Channel PowerTrench® MOSFET
150 V, 2.4 A, 175 mΩ
Features
General Description
Max rDS(on) = 175 mΩ at VGS = 10 V, ID = 2.4 A
Max rDS(on) = 237 mΩ at VGS = 6 V, ID = 2.0 A
Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
Free from halogenated compounds and antimony oxides
RoHS Compliant
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low rDS(on) and gate charge provide excellent switching
performance.
Applications
DC – DC Primary Switch
Load Switch
Pin 1
Drain
DD G
Source
Bottom Drain Contact
DD
DD
DD S
MicroFET 2X2 (Bottom View)
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Curre -Continuous
-Pulsed
Parameter
TA = 25 °C
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
2.4
12
13
2.4
0.9
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
251
Device
FDMA86251
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMA86251 Rev.1.1
1
www.fairchildsemi.com
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDMA86251.PDF ] | |
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