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FDMA86151L fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDMA86151L
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMA86151L fiche technique
September 2014
FDMA86151L
Single N-Channel PowerTrench® MOSFET
100 V, 3.3 A, 88 mΩ
Features
„ Max rDS(on) = 88 mΩ at VGS = 10 V, ID = 3.3 A
„ Max rDS(on) = 132 mΩ at VGS = 4.5 V, ID = 2.7 A
„ Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
„ Free from halogenated compounds and antimony oxides
„ RoHS Compliant
General Description
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low rDS(on) and gate charge provide excellent switching
performance.
Application
„ DC – DC Buck Converters
Pin 1
Drain
DD G
Source
Bottom Drain Contact
DD
DD
DD S
MicroFET 2X2 (Bottom View)
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Curre -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
3.3
20
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
151
Device
FDMA86151L
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
FDMA86151L Rev.C
1
www.fairchildsemi.com

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