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PDF FDMA86551L Data sheet ( Hoja de datos )
| Número de pieza | FDMA86551L | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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October 2014
FDMA86551L
Single N-Channel PowerTrench® MOSFET
60 V, 7.5 A, 23 mΩ
Features
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.5 A
Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6 A
Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
Free from halogenated compounds and antimony oxides
RoHS Compliant
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low rDS(on) and gate charge provide excellent switching
performance.
Application
DC – DC Buck Converters
Pin 1
Drain
DD G
Source
DD S
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
DD
DD
GS
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
60
±20
7.5
45
37
2.4
0.9
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
551
Device
FDMA86551L
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMA86551L Rev.C2
1
www.fairchildsemi.com
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDMA86551L.PDF ] | |
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