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PDF FDMC8010ET30 Data sheet ( Hoja de datos )
| Número de pieza | FDMC8010ET30 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC8010ET30
N-Channel PowerTrench® MOSFET
30 V, 174 A, 1.3 mΩ
Features
Extended TJ rating to 175°C
Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
January 2015
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for applications where ultra low rDS(on) is
required in small spaces such as High performance VRM, POL
and Oring functions.
Applications
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
Oring FET
Pin 1
Pin 1
SS SG
S
S
D
D
DDDD
Top Bottom
Power 33
SD
GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Volage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalance Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 6)
(Note 6)
(Note 1a)
(Note 5)
(Note 3)
(Note 1a)
Ratings
30
±20
174
123
30
835
153
65
2.8
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.3
53
°C/W
Device Marking
FDMC8010ET
Device
FDMC8010ET30
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMC8010ET30 Rev. 1.0
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
NOTES:
ZθJC(t)
RθJC =
=2.r3(to)Cx/WRθJC
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-1
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2015 Fairchild Semiconductor Corporation
FDMC8010ET30 Rev.1.0
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDMC8010ET30.PDF ] | |
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