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PDF FDMS86255ET150 Data sheet ( Hoja de datos )
| Número de pieza | FDMS86255ET150 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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January 2015
FDMS86255ET150
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 63 A, 12.4 mΩ
Features
Extended TJ rating to 175°C
Shielded Gate MOSFET Technology
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A
Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Applications
OringFET / Load Switching
Synchronous rectification
DC-DC Conversion
Top
Pin 1
Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
Power 56
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100°C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
150
±20
63
44
10
276
541
136
3.3
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.1
45
°C/W
Device Marking
FDMS86255ET
Device
FDMS86255ET150
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMS86255ET150 Rev. C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 1.1 °C/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-1 100
©2015 Fairchild Semiconductor Corporation
FDMS86255ET150 Rev. C
5
www.fairchildsemi.com
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