FDMS86150ET100 Datasheet PDF - Fairchild Semiconductor
| Part Number | FDMS86150ET100 | |
| Description | MOSFET ( Transistor ) | |
| Manufacturers | Fairchild Semiconductor | |
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FDMS86150ET100
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 128 A, 4.85 mΩ
January 2015
Features
Extended TJ rating to 175°C
Shielded Gate MOSFET Technology
Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Applications
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
Top
Pin 1
Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
Power 56
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
100
±20
128
90
16
617
726
187
3.3
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
0.8
45
°C/W
Device Marking
FDMS86150ET
Device
FDMS86150ET100
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMS86150ET100 Rev.C
1
www.fairchildsemi.com
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Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 0.8 °C/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-1
1
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDMS86150ET100 Rev.C
5
www.fairchildsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FDMS86150ET100 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDMS86150ET100.PDF Datasheet ] | |
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