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PDF FDMS86350ET80 Data sheet ( Hoja de datos )
| Número de pieza | FDMS86350ET80 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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January 2015
FDMS86350ET80
N-Channel PowerTrench® MOSFET
80 V, 198 A, 2.4 mΩ
Features
General Description
Extended TJ rating to 175°C
Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A
Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
Primary MOSFET
Synchronous Rectifier
Load Switch
Motor Control Switch
Top
Pin 1
Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
D
D
SD
GD
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
80
±20
198
140
25
693
864
187
3.3
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
0.8
45
°C/W
Device Marking
FDMS86350ET
Device
FDMS86350ET80
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMS86350ET80 Rev. C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 0.8 °C/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2015 Fairchild Semiconductor Corporation
FDMS86350ET80 Rev. C
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDMS86350ET80.PDF ] | |
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