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Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDPC8014S
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDPC8014S fiche technique
April 2014
FDPC8014S
PowerTrench® Power Clip
25V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A
„ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
Q2: N-Channel
„ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 41 A
„ Max rDS(on) = 1.4 mΩ at VGS = 4.5 V, ID = 37 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for
lower circuit inductance and reduced switch node
ringing
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
PIN1
PIN1
PAD10
V+(HSD)
HSG
GR
V+
V+
PAD9
GND(LSS)
LSG HSG
SW GR
SW V+
SW V+
SW
LSG
SW
SW
SW
Top Power Clip 5X6 Bottom
Pin Name Description
1 HSG HighSideGate
2 GR Gate Return
Pin
3,4,10
5,6,7
Name
V+(HSD)
SW
Description
Pin
High Side Drain
8
Switching Node, Low Side Drain 9
Name
Description
LSG
Low Side Gate
GND(LSS) Low Side Source
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
TC = 25 °C
TA = 25 °C
TA = 25 °C (Note 4)
(Note 3)
TC = 25 °C
TA = 25 °C
Q1
25Note5
Q2
25
±12 ±12
60
20Note1a
110
41Note1b
75 160
73 253
21
2.1Note1a
42
2.3 Note1b
-55 to +150
Units
V
V
A
mJ
W
°C
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
6.0
60Note1a
130Note1c
3.0
55Note1b
120Note1d
°C/W
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
1
www.fairchildsemi.com

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