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PDF FDMT800152DC Data sheet ( Hoja de datos )
| Número de pieza | FDMT800152DC | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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August 2015
FDMT800152DC
N-Channel Dual CoolTM 88 PowerTrench® MOSFET
150 V, 72 A, 9.0 mΩ
Features
General Description
Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
Low profile 8x8mm MLP package
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
MSL1 robust package design
OringFET / Load Switching
100% UIL tested
Synchronous Rectification
RoHS Compliant
DC-DC Conversion
Pin 1
Pin 1
G
S
S
G
S
SS
D
D
D
D
D
D
Top
Dual CoolTM 88
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
S
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
D
D
Ratings
150
±20
72
45
13
413
726
113
3.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
2.0
1.1
38
81
15
21
9
°C/W
Device Marking
800152DC
Device
FDMT800152DC
Package
Dual CoolTM 88
Reel Size
13”
Tape Width
13.3 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMT800152DC Rev. 1.1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
ID = 13 A
8
6
4
VDD = 50 V
VDD = 75 V
VDD = 100 V
2
0
0 12 24 36 48 60
Qg, GATE CHARGE (nC)
10000
1000
100
Ciss
Coss
10 Crss
f = 1 MHz
VGS = 0 V
1
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 7. Gate Charge Characteristics
Figure8. Capacitancevs.Drain
to Source Voltage
100
TJ = 25 oC
10 TJ = 100 oC
TJ = 125 oC
80
RθJC = 1.1 oC/W
64
VGS = 10 V
48
VGS = 6 V
32
16
1
0.01
0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
Figure9. Unclamped Inductive
Switching Capability
1000
1000
100 10 μs
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
150
100000
10000
SINGLE PULSE
RθJC = 1.1 oC/W
TC = 25 oC
10 THIS AREA IS
LIMITED BY rDS(on)
100 μs
SINGLE PULSE
1 TJ = MAX RATED
RθJC = 1.1 oC/W
TC = 25 oC
0.1
0.1 1
CURVE BENT TO
MEASURED DATA
10
1 ms
10 ms
DC
100 600
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1000
100
10
10-5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
Figure 12. Single Pulse Maximum
Power Dissipation
1
©2015 Fairchild Semiconductor Corporation
FDMT800152DC Rev. 1.1
5
www.fairchildsemi.com
5 Page | ||
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