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PDF FDMC86261P Data sheet ( Hoja de datos )
| Número de pieza | FDMC86261P | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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June 2014
FDMC86261P
P-Channel PowerTrench® MOSFET
-150 V, -9 A, 160 mΩ
Features
Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A
Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A
Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This product is optimised for fast switching applications as
well as load switch applications
100% UIL Tested
RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® technology. This
very high density process is especially tailored to minimize
on-state resistance and optimized for superior switching
performance.
Applications
Active Clamp Switch
Load Switch
Top Bottom
Pin 1
SS S
G
MLP 3.3x3.3
D
D
D
D
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-150
±25
-9
-2.7
-20
121
40
2.3
-55 to + 150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.1
53
°C/W
Device Marking
FDMC86261P
Device
FDMC86261P
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 125 oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100 1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMC86261P.PDF ] | |
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