|
|
PDF FDMC4435BZ Data sheet ( Hoja de datos )
| Número de pieza | FDMC4435BZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDMC4435BZ (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
FDMC4435BZ
P-Channel Power Trench® MOSFET
-30 V, -18 A, 20 mΩ
November 2015
Features
General Description
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A
Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A
Extended VGSS range (-25 V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
HBM ESD protection level >7 kV typical (Note 4)
100% UIL Tested
Termination is Lead-free and RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
Applications
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-30
±25
-18
-8.5
-50
32
31
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4
53
°C/W
Device Marking
FDMC4435BZ
Device
FDMC4435BZ
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC4435BZ Rev.2.5
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
100
VGS = -10V
10
1
0.5
10-3
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
10-2
10-1
1
10
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
100
1000
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.1 0.01
0.01
10-3
SINGLE PULSE
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
PDM
t1
t2
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 125 °C/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
100 1000
©2010 Fairchild Semiconductor Corporation
FDMC4435BZ Rev.2.5
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDMC4435BZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDMC4435BZ | MOSFET ( Transistor ) | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |